Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors

被引：38

作者：

Abe, Katsumi ^{[1
,2
]}

Sato, Ayumu ^{[1
]}

Takahashi, Kenji ^{[1
]}

Kumomi, Hideya ^{[1
,3
]}

Kamiya, Toshio ^{[2
,3
]}

Hosono, Hideo ^{[2
,3
,4
]}

机构：

[1] Canon Inc, Ohta Ku, Tokyo 1468501, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, Frontier Res Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2014年 / 559卷

关键词：

Amorphous In-Ga-Zn-O (a-IGZO); Thin-film transistor (TFT); Device model; Temperature dependence; FIELD-EFFECT-TRANSISTORS;

D O I：

10.1016/j.tsf.2013.11.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A device model for amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) that explains temperature dependence is proposed. It incorporates a carrier-density dependent mobility and a density of subgap traps of a-IGZO. The model parameters were extracted from only one transfer curve of an a-IGZO TFT at a low drain voltage through a simple analytical model. Device simulation based on this model reproduced current-and mobility-gate voltage characteristics of the a-IGZO TFT well over a wide range of bias voltage and temperature (253-393 K). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：40 / 43

页数：4

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