Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics

被引：30

作者：

Guimard, Denis ^{[1
,2
]}

Ishida, Mitsuru ^{[1
]}

Li, Lin ^{[1
]}

Nishioka, Masao ^{[3
]}

Tanaka, Yu ^{[4
]}

Sudo, Hisao ^{[4
]}

Yamamoto, Tsuyoshi ^{[4
]}

Kondo, Hayato ^{[2
]}

Sugawara, Mitsuru ^{[2
,4
]}

Arakawa, Yasuhiko ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] QD Laser Inc, Chyoda Ku, Tokyo 1000004, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[4] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

antimony; current density; etching; gallium arsenide; III-V semiconductors; indium compounds; MOCVD coatings; photoluminescence; semiconductor quantum dots; surfactants;

D O I：

10.1063/1.3099902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated metal organic chemical vapor deposition. This process consists of removing the excess segregated antimony from the surface of InAs/Sb:GaAs QDs by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of InAs/Sb:GaAs QDs (high density, low coalescence) without the formation of antimony-induced nonradiative defects. Finally, we show that this better QD interface quality results in a strong decrease of the threshold current densities of InAs/Sb:GaAs QD lasers in the 1.3 mu m band.

引用

页数：3

共 17 条

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