Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

被引：24

作者：

Solovan, M. N. ^{[1
]}

Brus, V. V. ^{[1
,2
]}

Maryanchuk, P. D. ^{[1
]}

Kovalyuk, T. T. ^{[1
]}

Rappich, J. ^{[2
]}

Gluba, M. ^{[2
]}

机构：

[1] Yuriy Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

来源：

PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 11期

关键词：

ELECTRICAL-RESISTIVITY; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; TITANIUM; BARRIER; GROWTH; LAYERS;

D O I：

10.1134/S1063783413110255

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is similar to 10(22) cm(-3), while electron scattering occurs at ionized titanium atoms.

引用

页码：2234 / 2238

页数：5

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