Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

被引：1

作者：

Narita, Syunki ^{[1
]}

Nara, Yuki ^{[1
]}

Enta, Yoshiharu ^{[1
]}

Nakazawa, Hideki ^{[1
]}

机构：

[1] Hirosaki Univ, Grad Sch Sci & Technol, 3 Bunkyo, Hirosaki, Aomori 0368561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SI期

关键词：

MOLECULAR-BEAM EPITAXY; THIN-FILMS; SIC FILM; DEPOSITION; SI(100); SUPPRESSION; CRYSTAL; SP(3); LAYER;

D O I：

10.7567/1347-4065/ab2536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A cubic silicon carbide (3C-SiC) film was fabricated by pulsed laser deposition on an aluminum nitride layer grown on an off-axis Si(110) substrate. This is the first report about the use of off-axis Si(110) substrates for manufacturing SiC/AlN/Si multilayers. A high-quality epitaxial 3C-SiC(111) film without rotation domains or twins, as evidenced by reflection high-energy electron diffraction (RHEED) measurements, was successfully obtained by using a wurtzite AlN(0001)/off-axis Si(110) substrate. On this 3C-SiC film, graphene was formed through annealing in ultrahigh vacuum at 1200 degrees C and its structure and chemical bonding were investigated via in situ RHEED and X-ray photoelectron spectroscopy; the full width at half maximum of the C 1s core level peak and the root-mean-square surface roughness were 0.60 eV and 0.14 nm, respectively, which were substantially lower than those (0.73 eV and 1.44 nm) previously reported for a graphene sample with similar thickness but formed on a SiC/AlN/on-axis Si(110) substrate. (C) 2019 The Japan Society of Applied Physics

引用

页数：8

共 35 条

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