Schottky diode based on composite organic semiconductors

被引：57

作者：

Gupta, RK ^{[1
]}

Singh, RA ^{[1
]}

机构：

[1] Banaras Hindu Univ, Fac Sci, Dept Chem, Mol Elect Lab, Varanasi 221005, Uttar Pradesh, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2004年 / 7卷 / 1-2期

关键词：

composite materials; semiconductors; polymers; Schottky diode; electrical properties;

D O I：

10.1016/j.mssp.2004.05.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Schottky diode with configuration Pt/PAn-PVC/In is fabricated using composite of polyaniline with polyvinyl chloride (PAn-PVC). Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Various junction parameters were calculated from the temperature-dependent I-V and C-V data and discussed. The carrier concentration from 1/C-2-V plots varies from 2.70 x 10(16) cm(-3) at room temperature to 4.62 x 10(16) cm(-3) at 343 K. Impedance studies shows the R(RC)(RC) equivalent circuit for the fabricated Schottky diode. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：83 / 87

页数：5

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