Improvement of dielectric and ferroelectric properties in bismuth sodium titanate based relaxors through Bi non-stoichiometry

被引:76
作者
Liu, Xiao [1 ,3 ]
Zhao, Yunxia [1 ]
Shi, Jing [2 ]
Du, Huiling [1 ]
Xu, Xiaomin [1 ]
Lu, Hai [1 ]
Che, Jingfeng [3 ]
Li, Xiangyuan [3 ]
机构
[1] Xian Univ Sci & Technol, Sch Mat Sci & Engn, Xian 710054, Shaanxi, Peoples R China
[2] Xidian Univ, Sch Electromech Engn, Minist Educ, Key Lab Elect Equipment Struct Design, Xian 710071, Shaanxi, Peoples R China
[3] Xian Herong New Energy Technol CO LTD, Xian 710200, Shaanxi, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Lead free; Dielectrics; Ferroelectrics; Non-stoichiometry; ENERGY-STORAGE PROPERTIES; HIGH-TEMPERATURE DIELECTRICS; ELECTROSTRICTIVE STRAIN; STRUCTURE EVOLUTION; CERAMICS; DENSITY; CAPACITORS; CONDUCTIVITY; TECHNOLOGY; EFFICIENCY;
D O I
10.1016/j.jallcom.2019.05.321
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Influence of Bi-non-stoichiometry is studied on the dielectric and ferroelectric properties of 0.72Bi(0.5+x)Na(0.5)TiO(3)-0.22SrTi(0.875)Nb(0.1)O(3)-0.06BaTiO(3) (BNBSNT) lead-free relaxors. All compositions exhibit high symmetry phase structure with dynamic polar nano regions. An enhanced degree of disorder is revealed and more polarization can be induced in Bi deficiency, which is related to the difficulty in the formation of a neutral defect complex between cations and oxygen vacancies. The relaxation of the two anomalies on temperature dependent permittivity is greatly affected by Bi non-stoichiometry especially that around the first dielectric anomaly temperature that can be deconvoluted by phenomenological models. The materials display a remarkable stability of high epsilon' (similar to 3000) over a wide temperature range (>320 degrees C) with considerably low loss (<= 0.003) in the ergodic relaxor state. Significant improvement on energy storage properties as well as electrostrictive strain (W-rec = 0.86 J/cm(3), eta= 83%; S = 0.235%, strain hysteresis of 7.34% at a low electric field of 80 kV/cm for bipolar P-E loops) is achieved due to chemical disorder and strong random field caused by Bi(3+ )deficiency. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:231 / 238
页数:8
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