Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

被引：13

作者：

Mokhtari, F. ^{[2
]}

Bouabdallah, A. ^{[1
]}

Zizi, M. ^{[1
]}

Hanchi, S. ^{[3
]}

Alemany, A. ^{[4
]}

机构：

[1] Univ Sci & Technol USTHB, LTSE Lab, Algiers, Algeria

[2] Unit Dev Silicon Technol, Algiers, Algeria

[3] UER Mecan, Algiers, Algeria

[4] CNRS, Lab EPM, Grenoble, France

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2009年 / 44卷 / 08期

关键词：

crystal growth; Czochralski; crucible geometry; Marangoni convection; pressure; MAGNETIC-FIELDS; HEAT-TRANSPORT; MELT FLOW; SIMULATION; SI; INTERFACE; SHAPE;

D O I：

10.1002/crat.200800580

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：787 / 799

页数：13

共 15 条

[1] NUMERICAL AND EXPERIMENTAL-STUDY OF A SOLID PELLET FEED CONTINUOUS CZOCHRALSKI GROWTH-PROCESS FOR SILICON SINGLE-CRYSTALS [J].