Temperature- and Excitation-power-dependent Optical Properties of InAs/GaAs Quantum Dots by Comparison of Photoluminescence and Photoreflectance Spectroscopy

被引：6
作者：
Kim, Jong Su [1 ]
Ko, Byoung Soo [1 ]
Yu, Jae-In [1 ]
Bae, In-Ho [1 ]
机构：
[1] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 02期
关键词：
InAs; Quantum dots; Photoreflectance; Photoluminescence; FRANZ-KELDYSH OSCILLATIONS;
D O I：
10.3938/jkps.55.640
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The optical properties of InAs/GaAs quantum dots (QDs) were investigated by using temperature-dependent and excitation-power-dependent photoreflectance (PR) spectroscopy, and the results were compared with those obtained using photoluminescence (PL) spectroscopy. We succeeded in evaluating the built-in electric field in InAs/GaAs QDs by using a PR experiment with the fast Fourier transform (FFT) method. The built-in electric field in InAs/GaAs QDs was strongly affected by the excitation-power and the sample temperatures. The temperature dependence of the built-in electric field in strained InAs/GaAs QDs may be explained by the temperature dependence of the carrier confinement effect in the InAs/GaAs QDs.
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收藏
页码：640 / 645
页数：6
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