Magnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition

被引：117
|
作者：
Yan, L
Ong, CK
Rao, XS
机构：
[1] Natl Univ Singapore, CSMM, Singapore 119260, Singapore
[2] Natl Univ Singapore, Temasek Labs, Singapore 119260, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 01期
关键词：
D O I：
10.1063/1.1757652
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Co-doped Zn1-xCoxAl0.01O (x=0.15,0.3) and (Mn, Co) codoped Zn-0.7(Mn0.15Co0.15)O thin films were fabricated on Al2O3 (0001) by pulsed laser deposition. The doped ZnO thin films with well wurtzite structures could be deposited at a low temperature of 400 degreesC and low oxygen pressure of 5x10(-5) Pa. The Co-doped ZnO showed metallic conductivity with low resistance, while the (Mn, Co) codoped ZnO was semiconductor with high resistance, which was confirmed by the resistance vs temperature measurements. All the three doped ZnO films showed room temperature (290 K) ferromagnetism, with the saturated magnetic moments of 0.08mu(B)/Co, 0.17mu(B)/Co, and 0.19mu(B)/(0.5Co+0.5Mn) for Zn0.85Co0.15Al0.01O, Zn0.7Co0.3Al0.01O, and Zn-0.7(Mn0.15Co0.15)O, respectively. (C) 2004 American Institute of Physics.
引用
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页码：508 / 511
页数：4
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