Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films

被引：23

作者：

Suergers, Christoph ^{[1
,2
]}

Fischer, Gerda ^{[1
,2
]}

Winkel, Patrick ^{[1
,2
]}

Loehneysen, Hilbert V. ^{[1
,2
,3
]}

机构：

[1] Karlsruhe Inst Technol, Inst Phys, D-76049 Karlsruhe, Germany

[2] DFG Ctr Funct Nanostruct, D-76049 Karlsruhe, Germany

[3] Karlsruhe Inst Technol, Inst Festkorperphys, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 10期

关键词：

SPONTANEOUS RESISTIVITY ANISOTROPY; MAGNETORESISTANCE; PHASE; ANTIFERROMAGNETISM; MAGNETIZATION; SPINTRONICS; TEMPERATURE; METALS;

D O I：

10.1103/PhysRevB.90.104421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R-0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for Mn5Ge3Cx films. This difference is presumably due to the different lattice parameters and different atomic configurations of the metalloids Ge and Si affecting the electronic band structure. The concomitant sign change of R-0 and the AMR ratio with temperature observed for Mn5Ge3Cx films is discussed in a two-current model indicating an electronlike minority-spin transport at low temperatures.

引用

页数：9

共 53 条

[31] MAGNETIC SUSCEPTIBILITY OF AL2O3-TI3+ [J].

SMITH, AR ;

ARNOLD, DJ ;

MIRES, RW .

PHYSICAL REVIEW B, 1970, 2 (07) :2323-&

[32] Control of magnetic properties of epitaxial Mn5Ge3Cx films induced by carbon doping [J].

Spiesser, A. ;

Slipukhina, I. ;

Dau, M. -T. ;

Arras, E. ;

Le Thanh, V. ;

Michez, L. ;

Pochet, P. ;

Saito, H. ;

Yuasa, S. ;

Jamet, M. ;

Derrien, J. .

PHYSICAL REVIEW B, 2011, 84 (16)

[33] Spin polarization tuning in Mn5-xFexGe3 [J].

Stroppa, A. ;

Kresse, G. ;

Continenza, A. .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[34] Competing magnetic phases of Mn5Ge3 compound [J].

Stroppa, Alessandro ;

Peressi, Maria .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01) :44-52

[35] Magnetism of carbon doped Mn5Si3 and Mn5Ge3 films [J].

Suergers, C. ;

Potzger, K. ;

Fischer, G. .

JOURNAL OF CHEMICAL SCIENCES, 2009, 121 (02) :173-176

[36] Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification [J].

Suergers, C. ;

Potzger, K. ;

Strache, T. ;

Moeller, W. ;

Fischer, G. ;

Joshi, N. ;

Von Loehneysen, H. .

APPLIED PHYSICS LETTERS, 2008, 93 (06)

[37] Large topological Hall effect in the non-collinear phase of an antiferromagnet [J].

Suergers, Christoph ;

Fischer, Gerda ;

Winkel, Patrick ;

Loehneysen, Hilbert V. .

NATURE COMMUNICATIONS, 2014, 5

[38] Local structural and magnetic properties of Mn5Si3Cx films [J].

Sürgers, C ;

Von Löhneysen, H ;

Kelemen, MT ;

Dormann, E ;

Brooks, MSS .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) :383-385

[39] Preparation and structural characterization of ferromagnetic Mn5Si3Cx films -: art. no. 174423 [J].

Sürgers, C ;

Gajdzik, M ;

Fischer, G ;

von Löhneysen, H ;

Welter, E ;

Attenkofer, K .

PHYSICAL REVIEW B, 2003, 68 (17)

[40] Chirality-driven anomalous hall effect in weak coupling regime [J].

Tatara, G ;

Kawamura, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2002, 71 (11) :2613-2616

← 1 2 3 4 5 6 →