Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films

被引：23
作者：
Suergers, Christoph [1 ,2 ]
Fischer, Gerda [1 ,2 ]
Winkel, Patrick [1 ,2 ]
Loehneysen, Hilbert V. [1 ,2 ,3 ]
机构：
[1] Karlsruhe Inst Technol, Inst Phys, D-76049 Karlsruhe, Germany
[2] DFG Ctr Funct Nanostruct, D-76049 Karlsruhe, Germany
[3] Karlsruhe Inst Technol, Inst Festkorperphys, D-76021 Karlsruhe, Germany
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 10期
关键词：
SPONTANEOUS RESISTIVITY ANISOTROPY; MAGNETORESISTANCE; PHASE; ANTIFERROMAGNETISM; MAGNETIZATION; SPINTRONICS; TEMPERATURE; METALS;
D O I：
10.1103/PhysRevB.90.104421
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R-0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for Mn5Ge3Cx films. This difference is presumably due to the different lattice parameters and different atomic configurations of the metalloids Ge and Si affecting the electronic band structure. The concomitant sign change of R-0 and the AMR ratio with temperature observed for Mn5Ge3Cx films is discussed in a two-current model indicating an electronlike minority-spin transport at low temperatures.
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页数：9
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