Direct electrical measurement of the self-assembled nickel silicide nanowire

被引：66

作者：

Kim, Joondong ^{[1
]}

Anderson, Wayne A.

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790390, South Korea

来源：

NANO LETTERS | 2006年 / 6卷 / 07期

关键词：

D O I：

10.1021/nl0602894

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present results from the direct electrical measurement of an as-grown nanowire. The nickel silicide (NiSi) nanowire was spontaneously grown across a trench between two electrodes used for measurement. The NiSi nanowire, 58 nm in diameter and 2.9 mu m in length, showed a low resistance characteristic of 147.9 Omega. This unique method is straightforward and does not require removal of a grown nanowire to be moved into a measurement environment.

引用

页码：1356 / 1359

页数：4

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