Porous silicon layers used for gas sensor applications

被引：76
作者：
Foucaran, A
PascalDelannoy, F
Giani, A
Sackda, A
Combette, P
Boyer, A
机构：
[1] Centre d'Electronique de Montpellier, Université de Montpellier II, 34000 Montpellier Cedex 5, Place E. Bataillon
来源：
THIN SOLID FILMS | 1997年 / 297卷 / 1-2期
关键词：
porous silicon; gas sensors; electrical measurements and properties;
D O I：
10.1016/S0040-6090(96)09437-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this communication we report on the elaboration of porous silicon layers for gas sensor applications. We describe our test system for gas sensors, and we investigate the electric characteristics of porous silicon layers (p type) under different gases and levels of humidity. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：317 / 320
页数：4
相关论文
共 12 条
  • [1] INVESTIGATIONS OF THE ELECTRICAL-PROPERTIES OF POROUS SILICON
    ANDERSON, RC
    MULLER, RS
    TOBIAS, CW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) : 3406 - 3411
  • [2] INFLUENCE OF SURFACE-DEFECTS ON THE ELECTRICAL BEHAVIOR OF ALUMINUM-POROUS SILICON JUNCTIONS
    CADET, C
    DERESMES, D
    VUILLAUME, D
    STIEVENARD, D
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2827 - 2829
  • [3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [4] ELECTRICAL BEHAVIOR OF ALUMINUM - POROUS SILICON JUNCTIONS
    DERESMES, D
    MARISSAEL, V
    STIEVENARD, D
    ORTEGA, C
    [J]. THIN SOLID FILMS, 1995, 255 (1-2) : 258 - 261
  • [5] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
    IMAI, K
    [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &
  • [6] ON THE TRANSPORT MECHANISM IN POROUS SILICON
    MARES, JJ
    KRISTOFIK, J
    PANGRAC, J
    HOSPODKOVA, A
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (02) : 180 - 182
  • [7] GAS IDENTIFICATION BY A SINGLE GAS SENSOR USING POROUS SILICON AS THE SENSITIVE MATERIAL
    MOTOHASHI, A
    KAWAKAMI, M
    AOYAGI, H
    KINOSHITA, A
    SATOU, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5840 - 5843
  • [8] GAS-SENSING PROPERTIES OF POROUS SILICON
    SCHECHTER, I
    BENCHORIN, M
    KUX, A
    [J]. ANALYTICAL CHEMISTRY, 1995, 67 (20) : 3727 - 3732
  • [9] MICROMACHINING APPLICATIONS OF POROUS SILICON
    STEINER, P
    LANG, W
    [J]. THIN SOLID FILMS, 1995, 255 (1-2) : 52 - 58
  • [10] ARE ELECTRICAL-PROPERTIES OF AN ALUMINUM-POROUS SILICON JUNCTION GOVERNED BY DANGLING BONDS
    STIEVENARD, D
    DERESMES, D
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1570 - 1572
12