Demonstration of all in situ magnesium diboride superconductor thin-film tunnel junctions

被引：26

作者：

Kim, TH ^{[1
]}

Moodera, JS ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.1773369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality planar tunnel junctions of MgB2 superconductor have been fabricated, all in situ, on Si single crystal substrates with Al2O3 as well as MgO barriers. Two superconducting energy gaps due to the sigma and pi bands of MgB2 have been unambiguously determined from superconductor-insulator-superconductor tunneling conductance measurements, showing good agreement with the theoretical predictions. Phonon structures have also been observed in tunneling. Our junction fabrication technique and well defined tunneling characteristics show a distinct possibility for the development of superconductive electronics based on MgB2 junctions. (C) 2004 American Institute of Physics.

引用

页码：434 / 436

页数：3

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