Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

被引：32

作者：

Arshad, M. K. Md ^{[1
,4
]}

Kilchytska, V. ^{[2
]}

Emam, M. ^{[2
]}

Andrieu, F. ^{[3
]}

Flandre, D. ^{[2
]}

Raskin, J. -P. ^{[2
]}

机构：

[1] Univ Malaysia Perlis, Inst Nanoelect Eng, Kangar 01000, Perlis, Malaysia

[2] Catholic Univ Louvain, ICTEAM, B-1348 Louvain, Belgium

[3] CEA Leti MINATEC, F-38054 Grenoble, France

[4] Univ Malaysia Perlis, Sch Microelect Eng, Kangar 01000, Perlis, Malaysia

来源：

SOLID-STATE ELECTRONICS | 2014年 / 97卷

关键词：

Ultra-thin body and thin buried oxide FD; SOI MOSFETs; Parasitic capacitances; RF figures of merit; Asymmetric double gate; ANALOG FIGURES; GROUND PLANE; THIN-BOX; IMPACT; PERFORMANCE; DEVICES; PARAMETERS; FREQUENCY; BODY; DC;

D O I：

10.1016/j.sse.2014.04.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (f(T)) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：38 / 44

页数：7