This paper presents a new built-in current sensor (BICS) that detects defects using the current testing technique in CMOS integrated circuits. The proposed circuit is a negligible impact on the performance of the circuit under test (CUT). In addition, no extra power dissipation and high-speed fault detection are achieved. It can be applicable in deep sub-micron process. The area overhead of the BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix 0.35 mu m standard CMOS technology.
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页码:868 / 870
页数:3
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Kim JB, 1998, IEEE J SOLID-ST CIRC, V33, P1266, DOI 10.1109/4.705368