A CMOS built-in current sensor for IDDQ testing

被引:2
作者
Kim, Jeong Beom [1 ]
Hong, Seung Ho [1 ]
机构
[1] Kangweon Natl Univ, Dept Elect Engn, Chunchon 200701, Kangwon, South Korea
关键词
IDDQ testing; current testing; BICS; reliability;
D O I
10.1093/ietele/e89-c.6.868
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new built-in current sensor (BICS) that detects defects using the current testing technique in CMOS integrated circuits. The proposed circuit is a negligible impact on the performance of the circuit under test (CUT). In addition, no extra power dissipation and high-speed fault detection are achieved. It can be applicable in deep sub-micron process. The area overhead of the BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix 0.35 mu m standard CMOS technology.
引用
收藏
页码:868 / 870
页数:3
相关论文
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