High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

被引：1

作者：

Alexandru, M. ^{[1
]}

Banu, V. ^{[1
]}

Florentin, M. ^{[1
]}

Jorda, X. ^{[1
]}

Vellvehi, M. ^{[1
]}

Tournier, D. ^{[2
]}

机构：

[1] CNM IMB CSIC, Campus UAB, Bellaterra 08193, Spain

[2] INSA Lyon, AMPERE, F-69180 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; Logic Gates; High Temperature; MESFET; Integrated Circuits; Flip-Flop;

D O I：

10.4028/www.scientific.net/MSF.778-780.1130

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300 degrees C of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.

引用

页码：1130 / +

页数：3

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