Influence of Bi Doping on the Electrical Properties of Ge2Sb2Te5 Thin Films for Phase Change Memory Application

被引：0

作者：

Lazarenko, Petr ^{[1
]}

Sherchenkov, Alexey ^{[1
]}

Kozyukhin, Sergey ^{[2
]}

Babich, Alexey ^{[1
]}

Timoshenkov, Sergey ^{[1
]}

Gromov, Dmitry ^{[1
]}

Yakubov, Alexey ^{[1
]}

Terekhov, Dmitry ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia

[2] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

来源：

INTERNATIONAL CONFERENCE ON COMPUTER SCIENCE AND INFORMATION ENGINEERING (CSIE 2015) | 2015年

关键词：

Phase change memory; Chalcogenide; Ge2Sb2Te5; doped; Bismuth; Electrical properties;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this article the influence of different amounts of Bi (0, 0.5, 1 and 3 wt. %) on the properties of Ge2Sb2Te5 thin films for phase change memory application is investigated. Crystalization temperature, resistivity, width of mobility gap, Urbach energy, activation energy of conductivity, position of the traps, and distribution of density of states in the mobility gap are estimated for all investigated compounds. Nonmonotonic concentration dependences of properties were observed. The significant deviations of parameters are observed for the GST225 with 0,5 wt. % of Bi.

引用

页码：487 / 492

页数：6

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