Preparation and properties of silica films with higher-alkyl groups

被引:16
作者
Usami, K
Sugahara, S
Kobayashi, M
Sumimura, K
Hattori, T
Matsumura, M
机构
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan
[2] Musashi Inst Technol, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 158, Japan
关键词
D O I
10.1016/S0022-3093(99)00577-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silica films with various types of alkyl groups were grown from the liquid phase, at room temperature, using alkyl tri-alkoxy silane compounds. From Fourier transform infrared (FTIR) absorption measurements, a majority of Si-alkyl bonds in the source molecules were found to remain in the grown film, while Si-alkoxy bonds were completely removed. Electrical and thermal properties have been measured comparatively for various films having dense alkyl groups. The films with the methyl group are promising for silicon production in ultra large-scale integrated circuits (Si-ULSIs) and the film having the vinyl group for non-heat-tolerant compound-semiconductor large-scale integrated circuits (LSIs). (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:199 / 207
页数:9
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