Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

被引：33

作者：

Li, Yang ^{[1
]}

Ng, Geok Ing ^{[1
]}

Arulkumaran, Subramaniam ^{[2
]}

Kumar, Chandra Mohan Manoj ^{[2
]}

Ang, Kian Siong ^{[2
]}

Anand, Mulagumoottil Jesudas ^{[1
]}

Wang, Hong ^{[1
]}

Hofstetter, Rene ^{[1
]}

Ye, Gang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS Nanoelect Ctr Excellence, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

关键词：

SAPPHIRE; GAN;

D O I：

10.7567/APEX.6.116501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-contact-resistance (R-c) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that R-c decreases drastically from the annealing temperature of 700 to 850 degrees C and slightly increases from 875 to 900 degrees C. The sample annealed at 850 degrees C exhibited the lowest R-c of 0.22 +/- 0.03 Omega.mm [specific contact resistivity, rho(c) = (0.78 +/- 0.22) x 10(-6) Omega.cm(2)] with a smooth surface morphology (RMS roughness similar to 5.5 nm). The low R-c is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. (C) 2013 The Japan Society of Applied Physics

引用

页数：4