Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

被引：32
|
作者：
Li, Yang [1 ]
Ng, Geok Ing [1 ]
Arulkumaran, Subramaniam [2 ]
Kumar, Chandra Mohan Manoj [2 ]
Ang, Kian Siong [2 ]
Anand, Mulagumoottil Jesudas [1 ]
Wang, Hong [1 ]
Hofstetter, Rene [1 ]
Ye, Gang [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS Nanoelect Ctr Excellence, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期
关键词：
SAPPHIRE; GAN;
D O I：
10.7567/APEX.6.116501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-contact-resistance (R-c) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that R-c decreases drastically from the annealing temperature of 700 to 850 degrees C and slightly increases from 875 to 900 degrees C. The sample annealed at 850 degrees C exhibited the lowest R-c of 0.22 +/- 0.03 Omega.mm [specific contact resistivity, rho(c) = (0.78 +/- 0.22) x 10(-6) Omega.cm(2)] with a smooth surface morphology (RMS roughness similar to 5.5 nm). The low R-c is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. (C) 2013 The Japan Society of Applied Physics
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页数：4
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