Future trends in high-resolution lithography

A perennial question is "what is the future of high-resolution lithography, a key technology that drives the semiconductor industry"? The dominant technology over the last 30 years has been optical lithography, which by lowering wavelengths to 193 nm (ArF) and 157 nm (F-2) and by using optical "tricks" such as phase shift masks, off-axis illumination and phase filters, should be capable of 100 nm CMOS technology. So where does this leave the competition? The 100-nm lithography used to be the domain of electron beam lithography but only in research laboratories. Significant efforts are being made to increase throughput by electron projection (scattering with angular limitation projection electron beam lithography or SCALPEL). X-ray lithography remains a demonstrated R&D tool waiting to be commercially exploited but the initial expenditure to do so is very high. Ion beam lithography and extreme ultraviolet (EUV) (lambda < 12 nm) have also received attention in recent years. This paper will concentrate on some of the key issues and speculate on how and when an alternative to optical lithography will be embraced by industry. (C) 2000 Published by Elsevier Science B.V. All rights reserved.