Investigation of strained Si/SiGe devices by MC simulation

被引：26
作者：
Jungemann, C
Subba, N
Goo, JS
Riecobene, C
Xiang, Q
Meinerzhagen, B
机构：
[1] Tech Univ Braunschweig, NST, D-38023 Braunschweig, Germany
[2] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 08期
关键词：
Monte Carlo simulation; strained Si; SiGe; MOSFET;
D O I：
10.1016/j.sse.2004.02.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transport in Si NMOSFETs with gate lengths from 48 to 23 mu is investigated by full-band Monte Carlo device simulation for three sets of devices: (I) unstrained Si control devices, (II) process matched strained Si devices, and (III) threshold voltage matched strained Si devices. While the process matched strained Si devices show the same performance improvement for all gate lengths, this is not the case for the threshold voltage matched devices for which the performance improvement degrades with shrinking gate length due to the heavier doping. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1417 / 1422
页数：6
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