Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors

被引：42

作者：

Jang, Mi ^{[1
]}

Park, Ji Hoon ^{[2
]}

Im, Seongil ^{[2
]}

Kim, Se Hyun ^{[3
]}

Yang, Hoichang ^{[1
]}

机构：

[1] Inha Univ, Dept Adv Fiber Engn, Inchon 402751, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[3] Yeungnam Univ, Dept Nano Med & Polymer Mat, Gyongsan 712749, South Korea

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILM TRANSISTORS; GATE-DIELECTRICS; PENTACENE; INSULATORS; STATES;

D O I：

10.1002/adma.201303388

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2)), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to mu m-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (mu(FET) approximate to 1.3 cm(2)V(-1)s(-1), Vth approximate to 0.5 V, SS approximate to 0.2 V), as well as excellent device reliability.

引用

页码：288 / 292

页数：5

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