Point defect characterization of GaN and ZnO

被引：40

作者：

Look, DC ^{[1
]}

Reynolds, DC

Fang, ZQ

Hemsky, JW

Sizelove, JR

Jones, RL

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

关键词：

ZnO; GaN; electron irradiation;

D O I：

10.1016/S0921-5107(99)00115-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Point defects are created in bulk ZnO and epitaxial GaN by 1-2 MeV electron irradiation at 300 K, and are studied by temperature-dependent Hall effect, photoluminescence, and deep level transient spectroscopy measurements. The N vacancy is identified as a fairly shallow donor in GaN, whereas defect identifications in ZnO are uncertain at this time. Both materials, but especially ZnO, are quite resistant to displacement damage. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：30 / 32

页数：3

共 10 条

[1] Electron-irradiation-induced deep level in n-type GaN [J].

Fang, ZQ ;

Hemsky, JW ;

Look, DC ;

Mack, MP .

APPLIED PHYSICS LETTERS, 1998, 72 (04) :448-449

[2] Optical detection of magnetic resonance in electron-irradiated GaN [J].

Linde, M ;

Uftring, SJ ;

Watkins, GD ;

Harle, V ;

Scholz, F .

PHYSICAL REVIEW B, 1997, 55 (16) :10177-10180

[3] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[4] Defect donor and acceptor in GaN [J].

Look, DC ;

Reynolds, DC ;

Hemsky, JW ;

Sizelove, JR ;

Jones, RL ;

Molnar, RJ .

PHYSICAL REVIEW LETTERS, 1997, 79 (12) :2273-2276

[5] Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements [J].

Look, DC ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3377-3379

[6]

MOLNAR RJ, 1995, MATER RES SOC SYMP P, V378, P479, DOI 10.1557/PROC-378-479

[7] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :211-213

[8] Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN [J].

Reynolds, DC ;

Look, DC ;

Jogai, B ;

Morkoc, H .

SOLID STATE COMMUNICATIONS, 1997, 101 (09) :643-646

[9] High power applications for GaN-based devices [J].

Trew, RJ ;

Shin, MW ;

Gatto, V .

SOLID-STATE ELECTRONICS, 1997, 41 (10) :1561-1567

[10] High Al-content AlGaN/GaN MODFET's for ultrahigh performance [J].

Wu, YF ;

Keller, BP ;

Fini, P ;

Keller, S ;

Jenkins, TJ ;

Kehias, LT ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) :50-53

← 1 →