Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices

被引：16

作者：

Crowder, JG ^{[1
]}

Hardaway, HR

Elliott, CT

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[2] QinetiQ, Malvern WR14 3PS, Worcs, England

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 2002年 / 13卷 / 06期

关键词：

mid-infrared; gas detection; gas sensing; optical immersion; room-temperature LED; room-temperature photodiode; InSb/InAlSb; nitrogen dioxide;

D O I：

10.1088/0957-0233/13/6/308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the application of optically immersed, room-temperature InSb/InAlSb LED and photodiode devices to the ppm-level detection of nitrogen dioxide (NO2) at a wavelength of 6 mum. The LED emission and the photodiode detectivity are both increased by the optical immersion, resulting in a power dissipation of only 0.25 mW in the LED. A White cell is used for high gas sensitivity and its relatively small numerical aperture can be conveniently matched to the field of view of the hyperspherically immersed devices.

引用

页码：882 / 884

页数：3

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