Excitonic Photoluminescence from Nanodisc States in Graphene Oxides

被引:53
作者
Kozawa, Daichi [1 ]
Zhu, Xi [2 ]
Miyauchi, Yuhei [1 ,3 ]
Mouri, Shinichiro [1 ]
Ichida, Masao [4 ]
Su, Haibin [2 ,5 ]
Matsuda, Kazunari [1 ]
机构
[1] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[4] Konan Univ, Fac Sci & Engn, Higashi Nada Ku, Kobe, Hyogo 6588501, Japan
[5] Nanyang Technol Univ, Inst Adv Studies, Singapore 639673, Singapore
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2014年 / 5卷 / 10期
基金
新加坡国家研究基金会; 日本科学技术振兴机构;
关键词
GRAPHITE OXIDE; FLUORESCENCE; NANORIBBONS; TRANSITION; REDUCTION; INSULATOR; ORIGIN; SINGLE; FILMS;
D O I
10.1021/jz500516u
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The origin of near-infrared (NIR) luminescence from graphene oxide (GO) is investigated by photoluminescence (PL) excitation spectroscopy, time-resolved PL spectroscopy, and density functional theory based many body perturbation theories. The energy of experimentally observed NIR PL peak depends on the excitation energy, and the peak broadens with increasing excitation energy. It is found that the PL decay curves in time-resolved spectroscopy show build-up behavior at lower emission energies due to energy transfer between smaller to larger graphene nanodisc (GND) states embedded in GO. We demonstrate that the NIR PL originates from ensemble emission of GND states with a few nanometers in size. The theoretical calculations reveal the electronic and excitonic properties of individual GND states with various sizes, which accounts for the inhomogeneously broadened NIR PL. We further demonstrate that the electronic properties are highly sensitive to the protonation and deprotonation processes of GND states using both the experimental and theoretical approaches.
引用
收藏
页码:1754 / 1759
页数:6
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