Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

被引：5

作者：

Rudawski, N. G. ^{[1
]}

Whidden, L. R. ^{[1
]}

Craciun, V. ^{[1
]}

Jones, K. S. ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 09期

关键词：

Cluster-ion implantation; Si; amorphization; strain; stress; solid-phase epitaxial growth; SHALLOW JUNCTION FORMATION; CARBON INCORPORATION; BORON-DIFFUSION; SILICON; HYDROGEN; LAYER;

D O I：

10.1007/s11664-009-0862-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 x 10(15) cm(-2) to 8.0 x 10(15) cm(-2) into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of similar to 5.0 x 10(14) cm(-2). Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 x 10(15) cm(-2) to 1.0 x 10(15) cm(-2). At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.

引用

页码：1926 / 1930

页数：5

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