Low Temperature Wafer Level Au-Au Bonding for Heterogeneous Integration

被引：0

作者：

Wang, Fei ^{[1
]}

Dai, Jiayun ^{[1
]}

Cui, Dongyi ^{[1
]}

Kong, Yuechan ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing, Peoples R China

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2021年

关键词：

low temperature; fine-pitch interconnection; thermo-compression bonding; heterogeneous integration;

D O I：

10.1109/IMWS-AMP53428.2021.9643992

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A low-temperature wafer-level solid-solid thermo-compression bonding structure using Au-Au metal is proposed in this paper. Two wafers with gold micro-bumps were bonded at 230 degrees C by thermo-compression. In order to improve bonding quality, an O-2 plasma surface pretreatment method was proposed to activate and increase hydrophobicity of the bonding metal. As a result, well performance and reliability are demonstrated through bonding interface analysis and electrical test, indicate that low temperature Au-Au bonding with fine-pitch bumps and high interconnects density is a promising method for future high density wafer level packaging and heterogeneous integration.

引用

页码：151 / 153

页数：3

共 50 条

[1] STUDY OF LOW-TEMPERATURE WAFER BONDING WITH Au-Au BONDING TECHNIQUE
Kurotaki, H.
Shinohara, H.
Kobayashi, H.
Mizuno, J.
Shoji, S.
MicroNano2008-2nd International Conference on Integration and Commercialization of Micro and Nanosystems, Proceedings, 2008, : 747 - 748
[2] Wafer-level Au-Au bonding in the 350-450 °C temperature range
Tofteberg, Hannah R.
Schjolberg-Henriksen, Kari
Fasting, Eivind J.
Moen, Alexander S.
Taklo, Maaike M. V.
Poppe, Erik U.
Simensen, Christian J.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2014, 24 (08)
[3] TSV Interposer with Au-Au Diffusion Bonding Technology for Wafer Level Fabrication
Chen, Xiao
Ye, Jiaotuo
Xu, Gaowei
Luo, Le
2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012), 2012, : 925 - 928
[4] Advanced Au-Au Direct Bonding for Enhanced Thermal Management in Heterogeneous Integration
Shou, Tao
Cheng, Lu
Zhang, Chengxin
Guo, Yuejin
2024 25TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT, 2024,
[5] Low Temperature Au-Au Bonding Using Ag Nanoparticles as Intermediate
Fang, Jun-Peng
Cai, Jian
Wang, Qian
Geng, Zhi-Ting
2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020), 2020, : 729 - 734
[6] Bonding behaviors of Au-Au and Au-Sn thin bumps at low temperature
Wang, Ying-Hui
Hutter, Matthias
Suga, Tadatomo
ICEPT: 2006 7TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS, 2006, : 118 - +
[7] Characterization of interfacial morphology of low temperature, low pressure Au-Au thermocompression bonding
Goorsky, Mark S.
Schjolberg-Henriksen, Kari
Beekley, Brett
Bai, Tingyu
Mani, Karthick
Ambhore, Pranav
Bajwa, Adeel
Malik, Nishant
Iyer, Subramanian S.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (02)
[8] Low temperature, wafer level Au-In bonding for ISM packaging
Wang, Qian
Jung, Kyudong
Choi, Minseog
Kim, Woonbae
Ham, Sukjin
Jeong, Byunggil
Moon, Changyoul
ICEPT: 2006 7TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS, 2006, : 498 - +
[9] Wafer-level low temperature bonding with Au-In system
Sohn, Yoon-Chul
Wang, Qian
Ham, Suk-Jin
Jeong, Byung-Gil
Jung, Kyu-Dong
Choi, Min-Seog
Kim, Woon-Bae
Moon, Chang-Youl
57TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2007 PROCEEDINGS, 2007, : 633 - +
[10] Low-Temperature Au-Au Bonding Using Nanoporous Au-Ag Sheets
Mimatsu, Hayata
Mizuno, Jun
Kasahara, Takashi
Saito, Mikiko
Nishikawa, Hiroshi
Shoji, Shuichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)

← 1 2 3 4 5 →