Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

被引：75
作者：
Chen, Z.
Fareed, R. S. Qhalid
Gaevski, M.
Adivarahan, V.
Yang, J. W.
Khan, Asif
Mei, J.
Ponce, F. A.
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Sensor Elect Technol Inc, Columbia, SC 29209 USA
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期
关键词：
D O I：
10.1063/1.2245436
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 degrees C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 mu m. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.
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