Multiple conduction behavior of BaRuO3 thin film prepared by pulsed laser ablation deposition

被引:0
作者
Gu, M [1 ]
Xu, WP [1 ]
Zheng, LR [1 ]
Lin, CL [1 ]
Cao, ZC [1 ]
机构
[1] CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA
关键词
ruthenium; oxides; laser ablation; conductivity;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, thin films of BaRuO3 prepared on a Si substrate by the pulsed laser ablation deposition method under oxygen ambient have been studied by means of X-ray diffraction, emission spectroscopy, Rutherford backscattering spectroscopy, RT Hall measurement and resistivity measurement. It is interesting to find that BaRuO3 thin films, having a different thermal history examined in the same temperature range, show different conduction types including metallicity, semiconduction and semiconductor-metal transition. The explanation about the findings are given using a suggested modified energy band diagram. It is believed that the versatile electrical behavior is helpful for the use in electrical contact materials.
引用
收藏
页码:95 / 98
页数:4
相关论文
共 7 条
[1]  
Cox P.A., 1992, TRANSITION METAL OXI, P237
[2]   CRYSTAL STRUCTURE OF BARIUM RUTHENIUM OXIDE AND RELATED COMPOUNDS [J].
DONOHUE, PC ;
KATZ, L ;
WARD, R .
INORGANIC CHEMISTRY, 1965, 4 (03) :306-&
[3]   FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].
EOM, CB ;
VANDOVER, RB ;
PHILLIPS, JM ;
WERDER, DJ ;
MARSHALL, JH ;
CHEN, CH ;
CAVA, RJ ;
FLEMING, RM ;
FORK, DK .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572
[4]  
Newnham R.E., 1975, STRUCTURE PROPERTY R
[5]   HIGH-TEMPERATURE CRYSTAL-CHEMISTRY OF TI2O3 - STRUCTURAL-CHANGES ACCOMPANYING SEMICONDUCTOR-METAL TRANSITION [J].
RICE, CE ;
ROBINSON, WR .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 1977, 33 (MAY13) :1342-1348
[6]  
Takikava O., 1986, IEEE P EL COMP C, P214
[7]  
Van Loan P.R., 1972, CERAM B, V51, P231