Characterization of titanium films for low temperature detectors

被引：0

作者：

Monticone, E ^{[1
]}

Rajteri, M ^{[1
]}

Rastello, ML ^{[1
]}

Lacquaniti, V ^{[1
]}

Gandini, C ^{[1
]}

Pasca, E ^{[1
]}

Ventura, G ^{[1
]}

机构：

[1] Ist Elettrotecnico Nazl Galileo Ferraris, I-10135 Turin, Italy

来源：

LOW TEMPERATURE DETECTORS | 2002年 / 605卷

关键词：

D O I：

暂无

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory.

引用

页码：181 / 184

页数：4

共 10 条

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