Strained interface of lattice-mismatched wafer fusion

被引:16
作者
Liau, ZL
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 19期
关键词
D O I
10.1103/PhysRevB.55.12899
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A model has been developed for the periodic strain field near the wafer-fusion interface of lattice-mismatched single crystals. A solution has been found that satisfies the elastic mechanical equilibrium and the boundary conditions. It reveals a wavy interface with the amplitude of the atomic displacement rapidly decaying a short distance from the interface. The model is consistent with the experimental observations of nearly defect-free material except at the interface. The strong alternating strains along the interface have implications for its electronic energy-band structure and electrical characteristics.
引用
收藏
页码:12899 / 12901
页数:3
相关论文
共 19 条
[1]   DOUBLE-FUSED 1.52-MU-M VERTICAL-CAVITY LASERS [J].
BABIC, DI ;
DUDLEY, JJ ;
STREUBEL, K ;
MIRIN, RP ;
BOWERS, JE ;
HU, EL .
APPLIED PHYSICS LETTERS, 1995, 66 (09) :1030-1032
[2]   LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
CHOI, HK ;
LEE, JW ;
SALERNO, JP ;
CONNORS, MK ;
TSAUR, BY ;
FAN, JCC .
APPLIED PHYSICS LETTERS, 1988, 52 (14) :1114-1115
[3]   144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES [J].
DUDLEY, JJ ;
ISHIKAWA, M ;
BABIC, DI ;
MILLER, BI ;
MIRIN, R ;
JIANG, WB ;
BOWERS, JE ;
HU, EL .
APPLIED PHYSICS LETTERS, 1992, 61 (26) :3095-3097
[4]   GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON [J].
FANG, SF ;
ADOMI, K ;
IYER, S ;
MORKOC, H ;
ZABEL, H ;
CHOI, C ;
OTSUKA, N .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :R31-R58
[5]   DIFFUSION-BONDED STACKED GAAS FOR QUASI-PHASE-MATCHED 2ND-HARMONIC GENERATION OF A CARBON-DIOXIDE LASER [J].
GORDON, L ;
WOODS, GL ;
ECKARDT, RC ;
ROUTE, RR ;
FEIGELSON, RS ;
FEJER, MM ;
BYER, RL .
ELECTRONICS LETTERS, 1993, 29 (22) :1942-1944
[6]   Silicon heterointerface photodetector [J].
Hawkins, AR ;
Reynolds, TE ;
England, DR ;
Babic, DI ;
Mondry, MJ ;
Streubel, K ;
Bowers, JE .
APPLIED PHYSICS LETTERS, 1996, 68 (26) :3692-3694
[7]  
HIRTH JP, 1968, THEORY DISLOCATIONS, P43
[8]   LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES [J].
KISH, FA ;
VANDERWATER, DA ;
PEANASKY, MJ ;
LUDOWISE, MJ ;
HUMMEL, SG ;
ROSNER, SJ .
APPLIED PHYSICS LETTERS, 1995, 67 (14) :2060-2062
[9]   VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES [J].
KISH, FA ;
STERANKA, FM ;
DEFEVERE, DC ;
VANDERWATER, DA ;
PARK, KG ;
KUO, CP ;
OSENTOWSKI, TD ;
PEANASKY, MJ ;
YU, JG ;
FLETCHER, RM ;
STEIGERWALD, DA ;
CRAFORD, MG ;
ROBBINS, VM .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2839-2841
[10]   WAFER FUSION - A NOVEL TECHNIQUE FOR OPTOELECTRONIC DEVICE FABRICATION AND MONOLITHIC INTEGRATION [J].
LIAU, ZL ;
MULL, DE .
APPLIED PHYSICS LETTERS, 1990, 56 (08) :737-739