High performance NPNBJTs in standard QMOS process for GSM transceiver and DVB-H tuner

We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the NPN BJT has been tailored to meet the requirements of the RF circuits. Careful optimization is performed using both simulation and experiment. Optimized NPN BJT has maximum current gain of similar to 44, collector-emitter breakdown voltage of similar to 7V, collector-base breakdown voltage of similar to 20V, Early voltage of similar to 25V, cutoff frequency of similar to 8.0GHz, and maximum oscillation frequency of similar to 11.6GHz. Low frequency noise characteristics of the NPN BJTs are investigated and the best structure for low noise level is identified. The corner frequency of the 1/f noise is similar to 2kHz at a collector current of similar to 1.7mA, which is similar to 4 orders lower than that of NMOS. As the flicker noise level is much lower than the CMOS, NPN BJT is used to realize the zero intermediate frequency (ZIF) direct conversion receiver (DCR) for GSM transceiver and DVB-H tuner. The resulting GSM receiver chain has a gain of over 50dB and noise figure of 2.5 similar to 3.0dB. For DVB-H tuner operating in the range of 470 similar to 850MHz, NF of 4.5dB and IIP3 of -5dBm are achieved at a gain of 64dB.