A Broadband SiGe HBT Cascode Power Amplifier Achieving Watt-Level Peak Output Power With 38.6 PAE and 90.9 Large-Signal Fractional Bandwidth

被引:10
作者
Wan, Chuanchuan [1 ]
Zhang, Hao [1 ]
Zhao, Yuan [1 ]
Zeng, Ming [1 ]
Dong, Jiayu [1 ]
Li, Ling [2 ]
Wang, Keping [3 ]
机构
[1] Nanjing Res Inst Elect Technol, Integrated Circuits Div, Nanjing 210039, Peoples R China
[2] Southeast Univ, EAST Lab, Nanjing 210096, Peoples R China
[3] Tianjin Univ, Sch Microelect, EAST Lab, Tianjin 300072, Peoples R China
关键词
Phased-array; power amplifier (PA); SiGe; balanced; power combing; broadband; transformer; 90 degrees coupler; TRANSFORMER;
D O I
10.1109/TCSII.2022.3206113
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a broadband SiGe power amplifier that achieves 30.1 dBm peak PSAT, 38.6% peak power-added efficiency (PAE), 90.9% large-signal fractional bandwidth (FBW) and a 3 dB bandwidth from 5.4 to 13.8 GHz. A balanced topology with two-stage, four-way combing is utilized to achieve watt-level output power and high-power efficiency in a wide range of operating frequency. Power stage is optimized and simulated from the perspective of high output power. At the output stage, a 90 degrees coupler and two transformers are co-optimized for broadband output power combining as well as power matching. This balanced PA is implemented in a 0.13-mu m SiGe BiCMOS process with a chip area (with pads) of 2.31 mm(2).
引用
收藏
页码:4734 / 4738
页数:5
相关论文
共 21 条
[1]   A Broadband Stacked Power Amplifier in 45-nm CMOS SOI Technology [J].
Chen, Jing-Hwa ;
Helmi, Sultan R. ;
Azadegan, Reza ;
Aryanfar, Farshid ;
Mohammadi, Saeed .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (11) :2775-2784
[2]  
Chen Y, 2016, IEEE RAD FREQ INTEGR, P324, DOI 10.1109/RFIC.2016.7508317
[3]   Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers [J].
Dabag, Hayg-Taniel ;
Hanafi, Bassel ;
Golcuk, Fatih ;
Agah, Amir ;
Buckwalter, James F. ;
Asbeck, Peter M. .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (04) :1543-1556
[4]   A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-μm Technology [J].
Hou, Zhang Ju ;
Yang, Yang ;
Chiu, Leung ;
Zhu, Xi ;
Dutkiewicz, Eryk ;
Vardaxoglou, John C. ;
Xue, Quan .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2018, 65 (07) :2139-2150
[5]   Effects of Charcoal Matter and Effective Microorganism on Compost Maturity of Green Waste [J].
Wang, Hui ;
Sun, Xiangyang ;
Li, Suyan .
2ND CONFERENCE ON KEY TECHNOLOGY OF HORTICULTURE (CKTH 2010), 2010, :44-48
[6]   A 0.18-μm CMOS balanced amplifier for 24-GHz applications [J].
Jin, Jun-De ;
Hsu, Shawn S. H. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (02) :440-445
[7]   Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications [J].
Johnson, JB ;
Joseph, AJ ;
Sheridan, DC ;
Maladi, RM ;
Brandt, PO ;
Persson, J ;
Andersson, J ;
Bjorneklett, A ;
Persson, U ;
Abasi, F ;
Tilly, L .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (10) :1605-1614
[8]  
Ju I., 2022, NAT COMMUN, V70, P3524
[9]   Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit [J].
Ju, Inchan ;
Gong, Yunyi ;
Cressler, John D. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2020, 55 (09) :2356-2370
[10]   A Highly Efficient X-Band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-Tuned Wilkinson Power Combiner [J].
Ju, Inchan ;
Cressler, John D. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (11) :1609-1613