Shubnikov-de Haas effect in (Cd1-x-yZnxMny)(3)As-2 under pressure

We have investigated the Shubnikov-de Haas effect in single crystals of the group II-V diluted magnetic semiconductors (Cd1-x-yZnxMny)(3)As-2 (x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclotron mass m(c), the effective g-factor g*, and the Dingle temperature T-D have been determined. In both specimens a linear field dependence m(c)(B) = m(c)* + alpha B is observed, where m(c)* is independent of B but increases with pressure and where a does not depend on p and B. Additionally, pressure dependencies of g*, T-D and the Hall mobility mu(R) are observed. The dependence of m(c)* and g(*) on p is interpreted within the three-band Kane model. The decrease of mu(R) and T-D with increasing pressure is consistent with an increase of m(c)*.