High nitrogen pressure solution growth of GaN

被引：22

作者：

Bockowski, Michal ^{[1
,2
]}

机构：

[1] PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Sp Zoo, PL-01142 Warsaw, Poland

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 10期

关键词：

SINGLE-CRYSTALS; BULK GAN; CRYSTALLIZATION; N-2;

D O I：

10.7567/JJAP.53.100203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results of GaN growth from gallium solution under high nitrogen pressure are presented. Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. Depending on the seeds' structural quality, the differences in the structural properties of pressure grown material are demonstrated and analyzed. The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. The properties of differently doped GaN crystals are discussed. An application of the pressure grown GaN crystals as substrates for electronic and optoelectronic devices is reported. (C) 2014 The Japan Society of Applied Physics

引用

页数：9

共 47 条

[1] Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask [J].

Amilusik, M. ;

Sochacki, T. ;

Lucznik, B. ;

Bockowski, M. ;

Sadovyi, B. ;

Presz, A. ;

Dziecielewski, I. ;

Grzegory, I. .

JOURNAL OF CRYSTAL GROWTH, 2013, 380 :99-105

[2] Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates [J].

Bochowski, M ;

Grzegory, I ;

Krukowski, S ;

Lucznik, B ;

Wróblewski, M ;

Kamler, G ;

Borysiuk, J ;

Kwiatkowski, P ;

Jasik, K ;

Porowski, S .

JOURNAL OF CRYSTAL GROWTH, 2004, 270 (3-4) :409-419

[3] Platelets and needles: Two habits of pressure-grown GaN crystals [J].

Bockowski, M. ;

Grzegory, I. ;

Kamler, G. ;

Lucznik, B. ;

Krukowski, S. ;

Wroblewski, M. ;

Kwiatkowski, P. ;

Jasik, K. ;

Porowski, S. .

JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :414-420

[4] Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN [J].

Bockowski, M. ;

Grzegory, I. ;

Lucznik, B. ;

Sochacki, T. ;

Nowak, G. ;

Sadovyi, B. ;

Strak, P. ;

Kamler, G. ;

Litwin-Staszewska, E. ;

Porowski, S. .

JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) :5-10

[5] High nitrogen pressure solution growth of GaN in multi feed-seed configuration [J].

Bockowski, M. ;

Lucznik, B. ;

Sochacki, T. ;

Sadovyi, B. ;

Nowak, G. ;

Litwin-Staszewska, E. ;

Grzegory, I. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :453-456

[6] High nitrogen pressure solution growth of bulk GaN in "feed-seed" configuration [J].

Bockowski, M. ;

Grzegory, I. ;

Lucznik, B. ;

Sochacki, T. ;

Krysko, M. ;

Strak, P. ;

Dziecielewski, I. ;

Litwin-Staszewska, E. ;

Porowski, S. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07) :1507-1510

[7] High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates [J].

Bockowski, M. ;

Grzegory, I. ;

Lucznik, B. ;

Sochacki, T. ;

Krysko, M. ;

Kamler, G. ;

Porowski, S. .

SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2011, 54 (01) :42-46

[8] Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE [J].

Bockowski, M ;

Grzegory, I ;

Krukowski, S ;

Lucznik, B ;

Romanowski, Z ;

Wróblewski, M ;

Borysiuk, J ;

Weyher, J ;

Hageman, P ;

Porowski, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :194-206

[9] Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration [J].

Bockowski, Michal ;

Lucznik, Boleslaw ;

Sochacki, Tomasz ;

Amilusik, Mikolaj ;

Litwin-Staszewska, Elzbieta ;

Piotrzkowski, Ryszard ;

Grzegory, Izabella .

GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625

[10]

Bockowski M, 2010, SPRINGER SER MATER S, V133, P207

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