Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts

被引：7

作者：

Kim, M. D.

Baek, J. M.

Kim, T. G.

Kim, S. G.

Chung, K. S.

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Samsung Elect, Telecommun R&D Ctr, Photon Solut Lab, Suwon 442742, South Korea

[3] Korea Univ, Dept Elect & Comp Engn, Seoul 136701, South Korea

[4] Joongbu Univ, Dept Informat & Commun, Chungnam 132940, South Korea

[5] Kyung Hee Univ, Dept Elect Mat Res, Ctr Informat Display, Yongin 449701, South Korea

来源：

THIN SOLID FILMS | 2006年 / 514卷 / 1-2期

关键词：

chemical vapor deposition; indium phosphide; diffusion; optoelectronic devices;

D O I：

10.1016/j.tsf.2006.02.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes, and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard ring avalanche photodiode (APD) structure with recess etching. Electrochemical capacitance voltage measurements were carried out on the APD, to determine the concentration of holes that result from Zn diffusion, transfer length method measurements were used to determine the specific surface contact resistance, and bandwidth measurements were used to characterize the APD. The hole concentration and specific contact resistance of the APD structure were found to be 1 x 10(19) cm(-3) and 2.8 x 10(-6) Omega cm(-2), respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz. The results confirmed that our APD operated satisfactorily with good reliability. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：250 / 253

页数：4

共 12 条

[1] Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications [J].