GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

被引：81

作者：

Liu, Shih-Chien ^{[1
]}

Chen, Bo-Yuan ^{[1
]}

Lin, Yueh-Chin ^{[1
]}

Hsieh, Ting-En ^{[1
]}

Wang, Huan-Chung ^{[1
]}

Chang, Edward Yi ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

AlGaN/GaN; passivation; reliability; dynamic ON resistance; RELIABILITY; DEFECT;

D O I：

10.1109/LED.2014.2345130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.

引用

页码：1001 / 1003

页数：3

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