All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

被引：15

作者：

Kluepfel, Fabian Johannes ^{[1
]}

Holtz, Agnes ^{[1
]}

Schein, Friedrich-Leonhard ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 12期

关键词：

Inverter; junction FET (JFET); oxide electronics; zinc cobaltite (ZnCo2O4); zinc oxide (ZnO); THIN-FILM TRANSISTORS; LOW-VOLTAGE; SEMICONDUCTOR; CIRCUITS;

D O I：

10.1109/TED.2015.2493361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The use of a level shifter is demonstrated, in order to obtain full inverters, which can be integrated into logic circuits.

引用

页码：4004 / 4008

页数：5

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