BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications

We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTP). By adjusting growth and RTP temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550degreesC deposition followed by 900degreesC annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.