Effect of annealing on SiOx-TiO2 axial heterostructure nanowires and improved photodetection

被引：13

作者：

Dhar, J. C. ^{[1
]}

Mondal, A. ^{[2
]}

Singh, N. K. ^{[1
]}

Chakrabartty, S. ^{[2
]}

Bhattacharyya, A. ^{[3
]}

Chattopadhyay, K. K. ^{[4
]}

机构：

[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, Nagaland, India

[2] Natl Inst Technol Agartala, Dept Elect & Commun Engn, Jirania 799055, Tripura West, India

[3] Univ Calcutta, Dept Radio Phys & Elect, Kolkata 700009, India

[4] Jadavpur Univ, Dept Phys, Kolkata 700032, India

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 24期

关键词：

D O I：

10.1063/1.4858420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Glancing angle deposition technique has been used to synthesize the axial heterostructure SiOx-TiO2 nanowires (NWs) on the Si substrate. The field emission gun scanning electron microscope image shows the formation of perpendicular NWs on Si substrate. A typical transmission electron microscope image confirms the heterostructure NW which consists of SiOx of length similar to 130 nm and TiO2 of length similar to 170 nm. The amorphous NWs transformed to polycrystalline nature after annealing. The trap assisted radiative recombination process is absent for the annealed NWs. An averagely 1.1 fold enhanced photoabsorption was exhibited by the annealed NWs in the 200-350 nm region and 1.5 fold in the 500-850 nm region. The leakage current (2.6 x 10(-8) A/cm(2) at -0.5V) significantly reduced for annealed NWs device. A maximum 1.4 x 10(3) times enlarged photodetection has been observed for annealed device. (C) 2013 AIP Publishing LLC.

引用

页数：6

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