Visible-blind ultraviolet imagers consisting of 8X8 AlGaN p-i-n photodiode arrays

被引：5
作者：
Kim, K. C.
Sung, Y. M.
Lee, I. H.
Lee, C. R.
Kim, M. D.
Park, Y.
Kim, T. G. [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136075, South Korea
[2] Samsung Adv Inst Technol, Photon Lab, Suwon, South Korea
[3] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[4] Chonbuk Natl Univ, Div Adv Mat Engn, Chonju 561756, South Korea
[5] Korea Univ, Dept Mat Sci & Engn, Seoul 136075, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2006年 / 24卷 / 03期
关键词：
D O I：
10.1116/1.2192523
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8 X 8 backside-illuminated AlGaN p-i-n photodiode arrays. The discrete AlGaN p-i-n photodiodes showed a responsivity of 0.1 A/W, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8 X 8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 mu m 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8 X 8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands. (c) 2006 American Vacuum Society.
引用
收藏
页码：641 / 644
页数：4
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