Etching of organosilicate glass low-k dielectric films in halogen plasmas

被引:33
|
作者
Vitale, SA [1 ]
Sawin, HH [1 ]
机构
[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1116/1.1460891
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities. and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured, Black Diamond and Coral are etched rapidly in F-2, Cl-2, and HBr high density plasmas, and Cl-2 + HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F-2, Cl-2, HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitrogen from the OSGs, leaving a stoichiometric SiO2 layer. (C) 2002 American Vacuum Society.
引用
收藏
页码:651 / 660
页数:10
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