Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

被引：60

作者：

Pan, D ^{[1
]}

Zeng, YP ^{[1
]}

Kong, MY ^{[1
]}

Wu, J ^{[1
]}

Zhu, YQ ^{[1
]}

Zhang, CH ^{[1
]}

Li, JM ^{[1
]}

Wang, CY ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 10080,PEOPLES R CHINA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

infrared detectors; semiconductor quantum dots; semiconductor superlattices;

D O I：

10.1049/el:19961135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors.

引用

页码：1726 / 1727

页数：2

共 10 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[3] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

[4]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[5]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[6] HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS [J].

GUNAPALA, SD ;

BANDARA, KMSV ;

LEVINE, BF ;

SARUSI, G ;

PARK, JS ;

LIN, TL ;

PIKE, WT ;

LIU, JK .

APPLIED PHYSICS LETTERS, 1994, 64 (25) :3431-3433

[7] NORMAL INCIDENT INGAAS/GAAS MULTIPLE-QUANTUM-WELL INFRARED DETECTOR USING ELECTRON INTERSUBBAND TRANSITIONS [J].

KARUNASIRI, G ;

PARK, JS ;

CHEN, J ;

SHIH, R ;

SCHEIHING, JF ;

DODD, MA .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2600-2602

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9]

Levine B. F., 1993, J APPL PHYS, V74

[10]

Mukai K, 1996, APPL PHYS LETT, V68, P3013, DOI 10.1063/1.116681

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