Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

被引：14

作者：

Jung, Daehwan ^{[1
]}

Ironside, Daniel J. ^{[2
]}

Bank, Seth R. ^{[2
]}

Gossard, Arthur C. ^{[1
,3
]}

Bowers, John E. ^{[1
,3
]}

机构：

[1] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[2] Univ Texas Austin, Elect & Comp Engn, Austin, TX 78705 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 20期

关键词：

SURFACE-MORPHOLOGY; SELF-ORGANIZATION; INAS; LASERS; NANOSTRUCTURES; LAYER; SHAPE; PHOTOLUMINESCENCE; INP(001); GAIN;

D O I：

10.1063/1.5031772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis. Published by AIP Publishing.

引用

页数：5

共 29 条

[1] High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity [J].

Banyoudeh, Saddam ;

Reithmaier, Johann Peter .

JOURNAL OF CRYSTAL GROWTH, 2015, 425 :299-302

[2] Comparison of InAs quantum dots grown on GaInAsP and InP [J].

Barik, S. ;

Tan, H. H. ;

Jagadish, C. .

NANOTECHNOLOGY, 2006, 17 (08) :1867-1870

[3] High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm Tunnel Injection Laser [J].

Bhowmick, Sishir ;

Baten, Md Zunaid ;

Frost, Thomas ;

Ooi, Boon S. ;

Bhattacharya, Pallab .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (01) :7-14

[4] Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Desieres, Y ;

Benyattou, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934

[5] Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Olivares, J ;

Salem, B ;

Benyattou, T ;

Bremond, G .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510

[6] High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107 [J].

Caroff, P ;

Paranthoen, C ;

Platz, C ;

Dehaese, O ;

Folliot, H ;

Bertru, N ;

Labbé, C ;

Piron, R ;

Homeyer, E ;

Le Corre, A ;

Loualiche, S .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[7] Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers [J].

Cui, K. ;

Robertson, M. D. ;

Robinson, B. J. ;

Andrei, C. M. ;

Thompson, D. A. ;

Botton, G. A. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)

[8] Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers [J].

Eliseev, PG ;

Li, H ;

Liu, GT ;

Stintz, A ;

Newell, TC ;

Lester, LF ;

Malloy, KJ .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) :135-142

[9] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[10] Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) [J].

Gilfert, C. ;

Pavelescu, E. -M. ;

Reithmaier, J. P. .

APPLIED PHYSICS LETTERS, 2010, 96 (19)

← 1 2 3 →