Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection

被引：4
作者：
Raman, Rahul [1 ]
Nath, Amitabha [1 ]
Sarkar, Mitra Barun [1 ]
机构：
[1] Natl Inst Technol Agartala, Dept Elect & Commun Engn, Agartala 799046, West Tripura, India
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 06期
关键词：
ZrO2; nanoparticles; annealing; photodetector; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; NANOWIRE ARRAY; TIO2; FILM;
D O I：
10.1109/LED.2022.3168562
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Zirconium dioxide (ZrO2) nanoparticles (NPs) based device has been fabricated through glancing angle deposition (GLAD) technique. The field emission scanning electron microscopy (FESEM) images revealed that the NPs are agglomerated in high annealing temperatures (500 degrees C and 800 degrees C). The 800 degrees C annealed device showed lesser dark current density, enhanced light current density, maximum responsivity (33 A/W), enhanced internal gain (85.96), maximum detectivity (1.96 x 10(9) Jones), and low noise equivalent power (NEP) (1.45 x 10(-)(10) watt) than the 500 degrees C annealed and unannealed devices. This annealed ZrO2 NPs based device can be used as a superior device for improved photodetection.
引用
收藏
页码：918 / 921
页数：4
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