The band structure change of Hf0.5Zr0.5O2/Ge system upon post deposition annealing

被引：8

作者：

Feng, Ze ^{[1
]}

Peng, Yue ^{[2
]}

Liu, Huan ^{[2
]}

Sun, Yong ^{[1
]}

Wang, Yitong ^{[1
]}

Meng, Meng ^{[1
]}

Liu, Hui ^{[1
]}

Wang, Jiaou ^{[3
]}

Wu, Rui ^{[3
]}

Wang, Xinglu ^{[4
]}

Cho, Kyeongjae ^{[1
,4
]}

Han, Genquan ^{[2
]}

Dong, Hong ^{[1
]}

机构：

[1] Nankai Univ, Key Lab Photoelect Thin Film Devices & Technol Ti, Tianjin 300350, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[4] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED SURFACE SCIENCE | 2019年 / 488卷

基金：

中国国家自然科学基金;

关键词：

Band alignment; Hf0.5Zr0.5O2; Ge; Interfacial passivation layer; FERROELECTRICITY; SILICON; FILMS;

D O I：

10.1016/j.apsusc.2019.05.282

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOx film is critical to obtain high device performance. The band alignment of Hf0.5Zr0.5O2/SiOx/Ge system before and after post deposition annealing at 500 degrees C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV-Visible spectroscopy. The band gap of Hf0.5Zr0.5O2 is seen narrowed 0.27 +/- 0.05 eV, and the valence band offset between Hf0.5Zr0.5O2 and Ge decreases 0.25 eV +/- 0.05 eV after PDA at 500 degrees C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf0.5Zr0.5O2/SiOx and is valuable for Ge-based NC pFETs.

引用

页码：778 / 782

页数：5

共 32 条

[1] Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications [J].

Bang, Joonho ;

Matsuishi, Satoru ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2017, 110 (23)

[2] Thermal stability of Hf-based high-k dielectric films on silicon for advanced CMOS devices [J].

Bastos, KP ;

Driemeier, C ;

Pezzi, RP ;

Soares, GV ;

Miotti, L ;

Morais, J ;

Baumvol, IJR ;

Wallace, RM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 112 (2-3) :134-138

[3] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[4] Oxygen species in HfO2 films:: An in situ x-ray photoelectron spectroscopy study [J].

Driemeier, C. ;

Wallace, R. M. ;

Baumvol, I. J. R. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)

[5] CHARGING EFFECT IN X-RAY PHOTOELECTRON SPECTROMETRY [J].

EBEL, MF ;

EBEL, H .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (03) :169-180

[6] Hf-based high-k dielectrics for p-Ge MOS gate stacks [J].

Fadida, Sivan ;

Palumbo, Felix ;

Nyns, Laura ;

Lin, Dennis ;

Van Elshocht, Sven ;

Caymax, Matty ;

Eizenberg, Moshe .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (03)

[7] Hafnium zirconate gate dielectric for advanced gate stack applications [J].

Hegde, R. I. ;

Triyoso, D. H. ;

Samavedam, S. B. ;

White, B. E., Jr. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[8] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[9] Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer [J].

Kim, Han Joon ;

Park, Min Hyuk ;

Kim, Yu Jin ;

Lee, Young Hwan ;

Jeon, Woojin ;

Gwon, Taehong ;

Moon, Taehwan ;

Do Kim, Keum ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2014, 105 (19)

[10] Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

← 1 2 3 4 →