Optical detection of spin-filter effect for electron spin polarimetry

被引：15

作者：

Li, X. ^{[1
]}

Tereshchenko, O. E. ^{[2
,3
]}

Majee, S. ^{[1
]}

Lampel, G. ^{[1
]}

Lassailly, Y. ^{[1
]}

Paget, D. ^{[1
]}

Peretti, J. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Lab Phys Mat Condensee, F-91128 Palaiseau, France

[2] SB RAS, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 05期

关键词：

DEPENDENT TRANSMISSION; VALVE TRANSISTOR; LAYERS; BASE;

D O I：

10.1063/1.4892073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. (C) 2014 AIP Publishing LLC.

引用

页数：4

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