Structural properties of Ba0.6Sr0.4TiO3 thin films on epitaxial RuO2 electrodes

被引：4
|
作者：
Jia, QX
Kwon, C
Lu, P
机构：
[1] Univ Calif Los Alamos Natl Lab, Div Mat & Sci Technol, Los Alamos, NM 87545 USA
[2] New Mexico Tech, Dept Mat Sci & Engn, Socorro, NM 87801 USA
来源：
INTEGRATED FERROELECTRICS | 1999年 / 24卷 / 1-4期
关键词：
RuO2; Ba0.6Sr0.4TiO3; thin film deposition;
D O I：
10.1080/10584589908215578
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, we have demonstrated that epitaxial Ba0.6Sr0.4TiO3 thin films can be grown on the epitaxial RuO2 electrodes by pulsed laser ablation. The Ba0.6Sr0.4TiO3 films, deposited on epitaxial (200) oriented RuO2 grown on (100) yttria-stabilized zirconia, exhibit single out-of-plane orientation as well as in-plane alignments. The detailed epitaxial relationships between the Ba0.6Sr0.4TiO3 films and the RuO2 electrodes have been analyzed by X-ray diffraction and transmission electron microscopy.
引用
收藏
页码：57 / 63
页数：7
相关论文
共 50 条
  • [1] Structural properties of Ba0.6Sr0.4TiO3 thin films on epitaxial RuO2 electrodes
    Mat. and Science Technology Division, Mail Stop K763, Los Alamos National Laboratory, Los Alamos, NM 87545, United States
    不详
    Integr Ferroelectr, 1 (57-63):
  • [2] Piezoelectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films
    Cao, HX
    Li, ZY
    PHYSICS LETTERS A, 2005, 334 (5-6) : 429 - 435
  • [3] Lateral epitaxial growth of Ba0.6Sr0.4TiO3 thin films
    Lee, JS
    Lee, SY
    Jia, QX
    INTEGRATED FERROELECTRICS, 2003, 55 : 933 - 938
  • [4] Nonlinear dielectric response of epitaxial Ba0.6Sr0.4TiO3 thin films
    Jiang, Q
    Gao, YH
    EUROPEAN PHYSICAL JOURNAL B, 2005, 46 (02): : 193 - 199
  • [5] Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films
    Park, BH
    Peterson, EJ
    Jia, QX
    Lee, J
    Zeng, X
    Si, W
    Xi, XX
    APPLIED PHYSICS LETTERS, 2001, 78 (04) : 533 - 535
  • [6] Growth and characterization of Ba0.6Sr0.4TiO3 thin films on Si with Pt electrodes
    Kinder, L
    Zhang, XF
    Grigorov, IL
    Kwon, C
    Jia, QX
    Luo, L
    Zhao, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 2148 - 2150
  • [7] The size effect of Ba0.6Sr0.4TiO3 thin films on the ferroelectric properties
    Chen, Hongwei
    Yang, Chuanren
    Fu, Chunlin
    Zhao, Li
    Gao, Zhiqiang
    APPLIED SURFACE SCIENCE, 2006, 252 (12) : 4171 - 4177
  • [8] Domain configuration and dielectric properties of Ba0.6Sr0.4TiO3 thin films
    Fu, CL
    Yang, CR
    Chen, HW
    Hu, LY
    Dai, LS
    APPLIED SURFACE SCIENCE, 2005, 252 (02) : 461 - 465
  • [9] Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers
    Kim, Hyun-Suk
    Hyun, Tae-Seon
    Kim, Ho-Gi
    Yun, Tae-Soon
    Lee, Jong-Chul
    Kim, Il-Doo
    JOURNAL OF ELECTROCERAMICS, 2007, 18 (3-4) : 305 - 309
  • [10] Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers
    Hyun-Suk Kim
    Tae-Seon Hyun
    Ho-Gi Kim
    Tae-Soon Yun
    Jong-Chul Lee
    Il-Doo Kim
    Journal of Electroceramics, 2007, 18 : 305 - 309
12345